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DMC4040SSDQ document number: ds37235 rev. 2 - 2 1 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product 1 4 8 5 c4040sd y y w w 40v complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25 c (note 7 & 9) q1 40v 25m @ v gs = 10v 7.5a 40m @ v gs = 4.5v 6.2a q2 -40v 25m @ v gs = -10v -7.3a 45m @ v gs = -4.5v -5.7a description and applications this mosfet has been designed to ensure that r ds(on) of n and p channel fet are matched to minimize losses in both arms of the bridge. the DMC4040SSDQ is optimized for use in 3 phases brushless dc motor circuits (bldc), ccfl backlighting. ? 3 phases bldc motor ? ccfl backlighting features and benefits ? reduced footprint with two discrete devices in single so-8 ? low on-resistance ? fast switching speed ? low input/output leakage ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap available (note 4) mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram below ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging DMC4040SSDQ-13 automotive so-8 2,500/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capabl e. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. for more information, pl ease refer to http://www.diodes.c om/quality/product_grade_definitions /. 5. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information top view so-8 d1 s1 g1 s2 g2 to p v i e w d1 d2 d2 top view equivalent circuit d2 s2 g2 d1 q1 n-channel q2 p-channel s1 g 1 = manufacturer?s marking c4040sd = product type marking code yyww = date code marking yy = year (ex: 13 = 2013) ww = week (01 - 53) e3
DMC4040SSDQ document number: ds37235 rev. 2 - 2 2 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol n-channel - q1 p-channel - q2 units drain-source voltage v dss 40 -40 v gate-source voltage v gss 20 20 v continuous drain current v gs = 10v (notes 7 & 9) i d 7.5 -7.5 a t a = +70c (notes 7 & 9) 5.8 -5.8 (notes 6 & 9) 5.7 -5.7 (notes 6 & 10) 6.8 -6.8 pulsed drain current v gs = 10v (notes 8 & 9) i dm 29.0 -29.0 a continuous source current (body diode) (notes 7 & 9) i s 3.0 -3.0 a pulsed source current (body diode) (notes 8 & 9) i sm 29.0 -29.0 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol n-channel - q1 p-channel - q2 unit power dissipation linear derating factor (notes 6 & 9) p d 1.25 10 w mw/ c (notes 6 & 10) 1.8 14.3 (notes 7 & 9) 2.14 17.2 thermal resistance, junction to ambient (notes 6 & 9) r ja 100 c/w (notes 6 & 10) 70 (notes 7 & 9) 58 thermal resistance, junction to lead (notes 9 & 11) r jl 51 operating and storage temperature range t j, t stg -55 to +150 c notes: 6. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. same as note (6), except the device is measured at t 10 sec. 8. same as note (6), except the device is pulsed with d= 0. 02 and pulse width 300 s. the pulse current is limited by the ma ximum junction temperature. 9. for a dual device with one active die. 10. for a device with two active die running at equal power. 11. thermal resistance from junction to so lder-point (at the end of the drain lead).
DMC4040SSDQ document number: ds37235 rev. 2 - 2 3 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product thermal characteristics 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 r(theta junction-to-ambient), r ja one active die 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse t amb = 25c one active die dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb = 25c one active die pulse power dissipation maximum power (w) pulse width (s) single pulse t amb = 25c one active die 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a)
DMC4040SSDQ document number: ds37235 rev. 2 - 2 4 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product electrical characteris tics ? q1 n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 40 ? ? v i d = 250a, v gs = 0v zero gate voltage drain current i dss ? ? 1.0 a v ds = 40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) 0.8 1.3 1.8 v i d = 250a, v ds = v gs static drain-source on-resistance (note 12) r ds (on) ? 0.013 0.025 ? v gs = 10v, i d = 3a 0.028 0.040 v gs = 4.5v, i d = 3a forward transconductance (notes 12 & 13) g fs ? 12.6 ? s v ds = 5v, i d = 3a diode forward voltage (note 8) v sd ? 0.7 1.0 v i s = 1a, v gs = 0v dynamic characteristics ( note 13 ) input capacitance c iss ? 1790 ? pf v ds = 20v, v gs = 0v f = 1mhz output capacitance c oss ? 160 ? pf reverse transfer capacitance c rss ? 120 ? pf gate resistance r g ? 1.03 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (note 14) q g ? 16.0 ? nc v gs = 4.5v v ds = 20v i d = 3a total gate charge (note 14) q g ? 37.6 ? nc v gs = 10v gate-source charge (note 14) q gs ? 7.8 ? nc gate-drain charge (note 14) q gd ? 6.6 ? nc turn-on delay time (note 14) t d(on) ? 8.1 ? ns v dd = 20v, v gs = 10v i d = 3a turn-on rise time (note 14) t r ? 15.1 ? ns turn-off delay time (note 14) t d(off) ? 24.3 ? ns turn-off fall time (note 14) t f ? 5.3 ? ns notes: 12. measured under pulsed conditions. pulse width 300s; duty cycle 2% 13. for design aid only, not subject to production testing. 14. switching characteristics are independent of operating junction temperatures. typical characteristics ? q1 n-channel 0 5 10 15 20 25 30 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 3.5v gs v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 8.0v gs 0 5 10 15 20 25 30 01 2345 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds
DMC4040SSDQ document number: ds37235 rev. 2 - 2 5 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 10v gs 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.01 0.02 0.03 0.04 0.05 0.06 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a
DMC4040SSDQ document number: ds37235 rev. 2 - 2 6 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c rss c oss f = 1mhz 0 5 10 15 20 25 30 35 40 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 10,000 i , leaka g e c u r r en t (na) dss 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 20v i = 12a ds d
DMC4040SSDQ document number: ds37235 rev. 2 - 2 7 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product electrical characteris tics ? q2 p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -40 ? ? v i d = -250a, v gs = 0v zero gate voltage drain current i dss ? ? -1.0 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) -0.8 -1.3 -1.8 v i d = -250a, v ds = v gs static drain-source on-resistance (note 15) r ds (on) ? 0.018 0.025 ? v gs = -10v, i d = -3a 0.030 0.045 v gs = -4.5v, i d = -3a forward transconductance (notes 15 & 16) g fs ? 16.6 ? s v ds = -5v, i d = -3a diode forward voltage (note 15) v sd ? -0.7 -1.0 v i s = -1a, v gs = 0v dynamic characteristics (note 16) input capacitance c iss ? 1643 ? pf v ds = -20v, v gs = 0v f = 1mhz output capacitance c oss ? 179 ? pf reverse transfer capacitance c rss ? 128 ? pf gate resistance r g ? 6.43 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (note 17) q g ? 14.0 ? nc v gs = -4.5v v ds = -20v i d = -3a total gate charge (note 17) q g ? 33.7 ? nc v gs = -10v gate-source charge (note 17) q gs ? 5.5 ? nc gate-drain charge (note 17) q gd ? 7.3 ? nc turn-on delay time (note 17) t d(on) ? 6.9 ? ns v dd = -20v, v gs = -10v i d = -3a turn-on rise time (note 17) t r ? 14.7 ? ns turn-off delay time (note 17) t d(off) ? 53.7 ? ns turn-off fall time (note 17) t f ? 30.9 ? ns notes: 15. measured under pulsed conditions. pulse width 300s; duty cycle 2% 16. for design aid only, not subject to production testing. 17. switching characteristics are independent of operating junction temperatures typical characteristics ? q2 p-channel 0 0.5 1 1.5 2 fig. 13 typical output characteristic -v , drain-source voltage (v) ds 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d 01 2 345 fig. 14 typical transfer characteristic -v , gate-source voltage (v) gs 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds
DMC4040SSDQ document number: ds37235 rev. 2 - 2 8 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product 0 5 10 15 20 25 30 fig. 15 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d 0 0.01 0.02 0.03 0.04 0.05 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = -4.5v gs v = -10v gs 0 5 10 15 20 25 30 -i , drain current (a) d fig. 16 typical on-resistance vs. drain current and temperature 0 0.01 0.02 0.03 0.04 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -10v gs fig. 17 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1. 7 r , d r ai n -s o u r c e on-resistance (normalized) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d fig. 18 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.01 0.02 0.03 0.04 0.05 0.06 r , d r ain-s o u r c e o n- r esis t an c e ( ) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d 0 0.5 1.0 1.5 2.0 fig. 19 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a -v , gate threshold voltage (v) gs(th) i = -250a d i = -1ma d 0.2 0.4 0.6 0.8 1.0 1.2 fig. 20 diode forward voltage vs. current -v , source-drain voltage (v) sd 0 2 4 6 8 10 12 14 16 18 20 -i , s o u r c e c u r r en t (a) s t = 25c a
DMC4040SSDQ document number: ds37235 rev. 2 - 2 9 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product 0 5 10 15 20 25 30 fig. 21 typical total capacitance -v , drain-source voltage (v) ds 10 100 1,000 10,000 c , c a p a c i t an c e (p f ) c iss c rss c oss 0 5 10 15 20 25 30 35 40 fig. 22 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 10,000 -i , leaka g e c u r r en t (na) dss 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 23 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 -v , g a t e-s o u r c e v o l t a g e (v) gs v = -20v i = -12a ds d
DMC4040SSDQ document number: ds37235 rev. 2 - 2 10 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
DMC4040SSDQ document number: ds37235 rev. 2 - 2 11 of 11 www.diodes.com may 2014 ? diodes incorporated DMC4040SSDQ new product new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com

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